Course Description
Topics include the determination of semiconductor material parameters: crystal orientation, type, resistivity, layer thickness, and majority carrier concentration; silicon device fabrication and analysis techniques: thermal oxidation, oxide masking, solid state diffusion of intentional impurities, metal electrode evaporation, layer thickness determination by surface profiling and optical interferometer; MOS transistor design and fabrication using the above techniques, characterization, and verification of design models used. Corequisite: ECE 5150.
